1 features ? high speed switching with low capacitances ? high blocking voltage with low r ds(on) ? easy to parallel and simple to drive ? ultra-low drain-gate capacitance ? halogen free, rohs compliant benefts ? higher system effciency ? increased system switching frequency ? reduced cooling requirements ? increased system reliability applications ? auxiliary power supplies ? switch mode power supplies ? high-voltage capacitive loads package to-247-3 part number package c2m1000170d to-247-3 v ds 1700 v i d @ 25?c 5.0 a r ds(on) 1.0 ? c2m1000170d silicon carbide power mosfet c2 m tm mosfet technology n-channel enhancement mode maximum ratings (t c = 25 ?c unless otherwise specifed) symbol parameter value unit test conditions note v dsmax drain - source voltage 1700 v v gs = 0 v, i d = 100 a v gsmax gate - source voltage -10/+25 v absolute maximum values v gsop gate - source voltage -5/+20 v recommended operational values i d continuous drain current 5.0 a v gs = 20 v, t c = 25?c fig. 19 3.5 v gs = 20 v, t c = 100?c i d(pulse) pulsed drain current 6.0 a pulse width t p limited by t jmax fig. 22 p d power dissipation 69 w t c =25?c, t j = 150 ?c fig. 20 t j , t stg operating junction and storage temperature -55 to +150 ?c t l solder temperature 260 ?c 1.6mm (0.063) from case for 10s m d mounting torque 1 8.8 nm lbf-in m3 or 6-32 screw c2m1000170d rev. e, 10-2015
2 electrical characteristics (t c = 25?c unless otherwise specifed) symbol parameter min. typ. max. unit test conditions note v (br)dss drain-source breakdown voltage 1700 v v gs = 0 v, i d = 100 a v gs(th) gate threshold voltage 2.0 2.6 4 v v ds = v gs , i d = 0.5 ma fig. 11 2.1 v v ds = v gs, i d = 0.5 ma, t j = 150 c i dss zero gate voltage drain current 1 100 a v ds = 1.7 kv, v gs = 0 v i gss gate-source leakage current 250 na v gs = 20 v, v ds = 0 v r ds(on) drain-source on-state resistance 1.0 1.4 ? v gs = 20 v, i d = 2 a fig. 4,5,6 2.0 v gs = 20 v, i d = 2 a, t j = 150 c g fs transconductance 0.82 s v ds = 20 v, i ds = 2 a fig. 7 0.81 v ds = 20 v, i ds = 2 a, t j = 150 c c iss input capacitance 200 pf v gs = 0 v v ds = 1000 v f = 1 mhz v ac = 25 mv fig. 17,18 c oss output capacitance 12 c rss reverse transfer capacitance 1.3 e oss c oss stored energy 7 j fig 16 e on turn-on switching energy 40 j v ds = 1.2 kv, v gs = -5/20 v i d = 2 a, r g(ext) = 2.5 ?, l= 1478 h, t j = 150 c fig. 26 e off turn off switching energy 15 t d(on) turn-on delay time 6 ns v dd = 1.2 kv, v gs = -5/20 v i d = 2 a, r g(ext) = 2.5 ?, r l = 600 ? timing relative to v ds per iec60747-8-4 pg 83 fig. 27 t r rise time 10.5 t d(off) turn-off delay time 11 t f fall time 60 r g(int) internal gate resistance 24.8 ? f = 1 mhz , v ac = 25 mv q gs gate to source charge 4.7 nc v ds = 1.2 kv, v gs = -5/20 v i d = 2 a per iec60747-8-4 pg 21 fig. 12 q gd gate to drain charge 5.4 q g total gate charge 13 reverse diode characteristics symbol parameter typ. max. unit test conditions note v sd diode forward voltage 3.8 v v gs = - 5 v, i sd = 1 a, t j = 25 c fig. 8, 9, 10 3.3 v v gs = - 5 v, i sd = 1 a, t j = 150 c i s continuous diode forward current 4 a t c = 25 c note 1 t rr reverse recovery time 20 ns v gs = - 5 v, i sd = 2 a t j = 25 c v r = 1.2 kv dif/dt = 1200 a/s note 1 q rr reverse recovery charge 24 nc i rrm peak reverse recovery current 6.5 a note (1): when using sic body diode the maximum recommended v gs = -5v thermal characteristics symbol parameter typ. max. unit test conditions note r jc thermal resistance from junction to case 1.7 1.8 c/w fig. 21 r jc thermal resistance from junction to ambient 40 c2m1000170d rev. e, 10-2015
3 0.0 0.5 1.0 1.5 2.0 2.5 - 50 - 25 0 25 50 75 100 125 150 on resistance, r ds on (p.u.) junction temperature, t j ( c) conditions: i ds = 2 a v gs = 20 v t p < 200 s 0 1 2 3 4 5 6 0 4 8 12 16 20 drain - source current, i ds (a) drain - source voltage, v ds (v) conditions: t j = 150 c tp < 200 s v gs = 20 v v gs = 10 v v gs = 18 v v gs = 16 v v gs = 14 v v gs = 12 v 0 1 2 3 4 5 6 0 4 8 12 16 20 drain - source current, i ds (a) drain - source voltage, v ds (v) conditions: t j = - 55 c tp < 200 s v gs = 20 v v gs = 10 v v gs = 18 v v gs = 16 v v gs = 14 v v gs = 12 v 0 1 2 3 4 5 6 0 4 8 12 16 20 drain - source current, i ds (a) drain - source voltage, v ds (v) conditions: t j = 25 c tp < 200 s v gs = 20 v v gs = 10 v v gs = 18 v v gs = 16 v v gs = 14 v v gs = 12 v figure 2. output characteristics t j = 25 c typical performance 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 1 2 3 4 5 6 on resistance, r ds on (ohms) drain - source current, i ds (a) conditions: v gs = 20 v t p < 200 s t j = 150 c t j = - 55 c t j = 25 c 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 - 50 - 25 0 25 50 75 100 125 150 on resistance, r ds on (ohms) junction temperature, t j ( c) conditions: i ds = 2 a t p < 200 s v gs = 20 v v gs = 18 v v gs = 16 v v gs = 14 v figure 3. output characteristics t j = 150 c figure 4. ormalized on-resistance s. temperature figure 6. on-resistance s. temperature for various gate voltage figure 5. on-resistance s. drain current for various temperatures c2m1000170d rev. e, 10-2015
4 typical performance 0 1 2 3 4 5 0 2 4 6 8 10 12 14 16 drain - source current, i ds (a) gate - source voltage, v gs (v) conditions: v ds = 20 v tp < 200 s t j = 150 c t j = - 55 c t j = 25 c - 5 - 4 - 3 - 2 - 1 0 - 6 - 5 - 4 - 3 - 2 - 1 0 drain - source current, i ds (a) drain - source voltage, v ds (a) v gs = 0 v v gs = - 2 v v gs = - 5 v condition: t j = - 55 c t p < 200 s - 5 - 4 - 3 - 2 - 1 0 - 6 - 5 - 4 - 3 - 2 - 1 0 drain - source current, i ds (a) drain - source voltage, v ds (a) v gs = 0 v v gs = - 2 v v gs = - 5 v condition: t j = 25 c t p < 200 s - 5 - 4 - 3 - 2 - 1 0 - 6 - 5 - 4 - 3 - 2 - 1 0 drain - source current, i ds (a) drain - source voltage, v ds (a) v gs = 0 v v gs = - 2 v v gs = - 5 v condition: t j = 150 c t p < 200 s 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 - 50 - 25 0 25 50 75 100 125 150 threshold voltage, v th (v) junction temperature t j ( c) conditions v ds = 10 v i ds = 0.5 ma conditions v ds = v gs i ds = 0.5 ma - 5 0 5 10 15 20 25 0 2 4 6 8 10 12 14 gate - source voltage, v gs (v) gate charge, q g (nc) conditions: i ds = 2 a i gs = 100 ma v ds = 1200 v t j = 25 c figure 7. transfer characteristic for various junction temperatures figure 8. ody diode characteristic at -55 c figure 9. ody diode characteristic at 25 c figure 10. ody diode characteristic at 150 c figure 11. threshold voltage s. temperature figure 12. gate charge characteristics c2m1000170d rev. e, 10-2015
5 1 10 100 1000 0 50 100 150 200 capacitance (pf) drain - source voltage, v ds (v) c iss c oss conditions: t j = 25 c v ac = 25 mv f = 1 mhz c rss typical performance - 5 - 4 - 3 - 2 - 1 0 - 5 - 4 - 3 - 2 - 1 0 drain - source current, i ds (a) drain - source voltage, v ds (v) conditions: t j = - 55 c tp < 200 s v gs = 0 v v gs = 5 v v gs = 10 v v gs = 15 v v gs = 20 v - 5 - 4 - 3 - 2 - 1 0 - 5 - 4 - 3 - 2 - 1 0 drain - source current, i ds (a) drain - source voltage, v ds (v) conditions: t j = 25 c tp < 200 s v gs = 0 v v gs = 5 v v gs = 10 v v gs = 15 v v gs = 20 v - 5 - 4 - 3 - 2 - 1 0 - 5 - 4 - 3 - 2 - 1 0 drain - source current, i ds (a) drain - source voltage, v ds (v) conditions: t j = 150 c tp < 200 s v gs = 0 v v gs = 5 v v gs = 10 v v gs = 15 v v gs = 20 v 0 1 2 3 4 5 6 7 8 0 200 400 600 800 1000 1200 stored energy, e oss (j) drain to source voltage, v ds (v) 1 10 100 1000 0 200 400 600 800 1000 capacitance (pf) drain - source voltage, v ds (v) c iss c oss conditions: t j = 25 c v ac = 25 mv f = 1 mhz c rss figure 13. 3rd quadrant characteristic at -55 c figure 14. 3rd quadrant characteristic at 25 c figure 15. 3rd quadrant characteristic at 150 c figure 16. output capacitor stored energy figure 17. capacitances s. drain-source voltage (0-200 v) figure 18. capacitances s. drain-source voltage (0-1000 v) c2m1000170d rev. e, 10-2015
6 0 20 40 60 80 100 120 0 1 2 3 4 5 6 switching loss (uj) drain to source current, i ds (a) e off e on e total conditions: t j = 25 c v dd = 1200 v r g(ext) = 2.5 ? v gs = - 5/+20 v fwd = c2m1000170d l = 1478 h typical performance 0 1 2 3 4 5 6 - 55 - 30 - 5 20 45 70 95 120 145 drain - source continous current, i ds (dc) (a) case temperature, t c ( c) conditions: t j 150 c 0 10 20 30 40 50 60 70 80 - 55 - 30 - 5 20 45 70 95 120 145 maximum dissipated power, p tot (w) case temperature, t c ( c) conditions: t j 150 c 1e - 3 10e - 3 100e - 3 1 1e - 6 10e - 6 100e - 6 1e - 3 10e - 3 100e - 3 1 junction to case impedance, z thjc ( o c/w) time, t p (s) 0.5 0.3 0.1 0.05 0.02 0.01 singlepulse 0.01 0.10 1.00 10.00 0.1 1 10 100 1000 drain - source current, i ds (a) drain - source voltage, v ds (v) 100 s 1 ms 10 s conditions: t c = 25 c d = 0, parameter: t p 100 ms limited by r ds on 0 10 20 30 40 50 60 70 80 0 1 2 3 4 5 6 switching loss (uj) drain to source current, i ds (a) e off e on e total conditions: t j = 25 c v dd = 900 v r g(ext) = 2.5 ? v gs = - 5/+20 v fwd = c2m1000170d l = 1478 h figure 20. maximum power dissipation derating s. case temperature figure 19. continuous drain current derating s. case temperature figure 21. transient thermal impedance (junction - case) figure 22. safe operating area figure 23. clamped inductie switching energy s. drain current (v dd = 1200 v) figure 24. clamped inductie switching energy s. drain current (v dd = 900 v) c2m1000170d rev. e, 10-2015
7 typical performance 0 20 40 60 80 100 120 0 10 20 30 40 50 60 switching loss (uj) external gate resistor rg(ext) (ohms) e off e on e total conditions: t j = 25 c v dd = 1200 v i ds = 2 a v gs = - 5/+20 v fwd = c2m1000170d l = 1478 h 0 20 40 60 80 100 - 50 - 25 0 25 50 75 100 125 150 switching loss (uj) junction temperature, t j ( c) e off e on e total conditions: i ds = 2 a v dd = 1200 v r g(ext) = 2.5 ? v gs = - 5/+20 v fwd = c2m1000170d l = 1478 h 0 10 20 30 40 50 60 70 0 10 20 30 40 50 time (ns) external gate resistor, r g(ext) (ohms) conditions: t j = 25 c v dd = 1200 v r l = 600 ? v gs = - 5v/+20 v t d (off) t d (on) t f t r figure 25. clamped inductive switching energy vs. r g(ext) figure 26. clamped inductive switching energy vs. temperature figure 27. switching times vs. r g(ext) mvi 7mglmr 8mqiw(irmmsr c2m1000170d rev. e, 10-2015
8 figure 29. clamped inductive switching waveform test circuit l=1478 uh q 2 v dc c2 m1000170d q 1 v gs = - 5v c2m1000170d r g c dc = 42.3 uf 2.5 esd-hbm all devices passed 4000v 3a (>4000v) esd-mm all devices passed 200v a (>200v) esd-cdm all devices passed 1000v iv (>1000v) )7(6emrw 8iwmvgm7gliqemg c2m1000170d rev. e, 10-2015
9 package dimensions package to-247-3 recommended solder pad layout to-247-3 pos inches millimeters min max min max a .190 .205 4.83 5.21 a1 .090 .100 2.29 2.54 a2 .075 .085 1.91 2.16 b .042 .052 1.07 1.33 b1 .075 .095 1.91 2.41 b2 .075 .085 1.91 2.16 b3 .113 .133 2.87 3.38 b4 .113 .123 2.87 3.13 c .022 .027 0.55 0.68 d .819 .831 20.80 21.10 d1 .640 .695 16.25 17.65 d2 .037 .049 0.95 1.25 e .620 .635 15.75 16.13 e1 .516 .557 13.10 14.15 e2 .145 .201 3.68 5.10 e3 .039 .075 1.00 1.90 e4 .487 .529 12.38 13.43 e .214 bsc 5.44 bsc n 3 3 l .780 .800 19.81 20.32 l1 .161 .173 4.10 4.40 ?p .138 .144 3.51 3.65 q .216 .236 5.49 6.00 s .238 .248 6.04 6.30 t 9? 11? 9? 11? u 9? 11? 9? 11? v 2? 8? 2? 8? w 2? 8? 2? 8? pinout information: ? pin 1 = gate ? pin 2, 4 = drain ? pin 3 = source t u w v part number package marking c2m1000170d rev. e, 10-2015
10 10 related links ? c2m pspice models: http://wolfspeed.com/power/tools-and-support ? sic mosfet isolated gate driver reference design: http://wolfspeed.com/power/tools-and-support ? sic mosfet evaluation board: http://wolfspeed.com/power/tools-and-support ? 60w auxiliary power supply reference design: http://wolfspeed.com/power/tools-and-support c2m1000170d rev. e, 10-2015 copyright ? 2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree, the cree logo, and zero recovery are registered trademarks of cree, inc. cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.313.5451 www.cree.com/power notes ? rohs compliance the levels of rohs restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with eu directive 2011/65/ ec (rohs2), as implemented january 2, 2013. rohs declarations for this product can be obtained from your cree representative or from the product documentation sections of www.cree.com. ? reach compliance reach substances of high concern (svhcs) information is available for this product. since the european chemical agency (echa) has published notice of their intent to frequently revise the svhc listing for the foreseeable future,please contact a cree represen - tative to insure you get the most up-to-date reach svhc declaration. reach banned substance information (reach article 67) is also available upon request. ? this product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defbrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffc control systems.
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